Effect of thicknesses of InP epilayers on InP/GaAs heterostructure

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EarlyView Article

  • Published: Oct 11, 2017
  • Author: Jingjuan Li, Zuoxing Guo, Liang Zhao, Zhengquan Jia, Min Zhang, Lei Zhao
  • Journal: Surface and Interface Analysis

InP epilayers with different thicknesses were grown on GaAs substrates at a low temperature by using metalorganic chemical vapor deposition. Atom force microscope and double‐crystal X‐ray were carried out to investigate the morphology and the crystal quality. Transmission electron microscopy was performed to characterize the microstructure and morphology. It was found that with the epilayer thicknesses increased, the crystal quality was improved and the dislocations in epilayers were decreased. Moreover, the sample that has 150‐nm InP epilayer could observe large numbers of antidislocations in the gallium arsenide substrate. The formation mechanism of antidislocations was also discussed with the analysis of crystal structure and surface morphology. Furthermore, we proposed a mechanism to explain the motion and the reaction of antidislocations.

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