Reversibility of defect formation during oxygen‐assisted electron‐beam‐induced etching of graphene

Skip to Navigation

EarlyView Article

  • Published: Dec 6, 2017
  • Author: Guillaume Pillet, Victor Freire‐Soler, Marc Nuñez Eroles, Wolfgang Bacsa, Erik Dujardin, Pascal Puech
  • Journal: Journal of Raman Spectroscopy


We explore the defect formation on single‐layer graphene partially suspended over a microcavity upon etching by a focused electron beam in a reactive oxygen atmosphere. The formation of oxygenated defects in an area of several μm2 around the cut is studied by Raman spectroscopy. The narrow symmetric Raman D band has the same bandwidth as the G band line width of supported graphene. For suspended graphene, the D bandwidth is larger. From the ratio of the intensity of the Raman D and D′ band (ID/ID), it is concluded that mainly sp3‐type defects are formed on supported graphene and more defects with a different spectral signature are formed on suspended graphene. Annealing in reductive H2/Ar atmosphere is found to remove bonded oxygen on supported graphene, whereas on suspended graphene with higher density of defects, defects are removed only partially.

Social Links

Share This Links

Bookmark and Share


Suppliers Selection
Societies Selection

Banner Ad

Click here to see
all job opportunities

Most Viewed

Copyright Information

Interested in spectroscopy? Visit our sister site

Copyright © 2017 John Wiley & Sons, Inc. All Rights Reserved